AMMCW10 Broadcom / Avago RF Amplifier 6 – 20 GHz dB datasheet, inventory, & pricing. Avago Technologies’ AMMC GHz MMIC is an efficient two-stage amplifier designed to be used as a cascadable intermediate gain block for EW. Description Agilent’s AMMC- GHz MMIC is an efficient two- stage amplifier designed to be used as a cascadable intermediate gain block for EW.
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The amount of epoxy used for chip and or shim attachment should be just enough to provide a thin fillet around the bottom perimeter of the chip or shim. For best performance, the topside of the MMIC should be brought up to the same height as the circuit surrounding it. The product detailed below complies with the specifications published by RS Components. This feature is Quick question function, select the corresponding question wmmc, automatically enter the corresponding problem, remove your trouble of typing.
The RF input and output have matching circuitry for use in ? In communication systems, it can be used as a LO buffer, or as a transmit driver amplifier.
AVAGO AMMC RF Amplifier of AVAGO from China Suppliers –
RF connections should be kept as short as reasonable to minimize performance degradation due to undesirable series inductance. The backside of the chip is both RF and DC ground. Operation in excess of any one of these conditions may result in permanent damage to this device. Ensure that an ESD approved carrier is used when dice are transported from one destination ajmc another.
The foregoing information relates to product sold on, or after, the date shown below. These devices are ESD sensitive. Input and Output Return Loss: These devices are ESD sensitive.
AMMC-5618-W10 Broadcom, RF Amplifier, 14.5 dB 20 GHz, 6-Pin Chip
Thermosonic wedge bonding is the preferred method for wire attachment to the bond pads. It is fabricated using a PHEMT integrated circuit structure that provides exceptional efficiency and flat gain performance.
Noise Figure and Temperature Figure A single bond wire is sufficient for signal connections, however double-bonding with 0. This MMIC has exposed air bridges on the top surface and should be handled by the edges or with a custom collet do not pick up die with vacuum on die center.
Caution should be taken to not exceed the Absolute Maximum Rating for assembly temperature and time. Save to parts list Save to parts list. For improved reliability and moisture protection, the die is passivated at the active areas.
No connection to the gate pad is needed for single drain- bias operation. The ground plane should be free of any residue that may jeopardize electrical or mechanical attachment. Please send me detail product specification, thank you! Thank you for your feedback. A guided wedge at an ultrasonic power level of 64 dB can be used for the 0.
Ensure that an ESD approved carrier is used when dice are transported from one destination to another. Isolation and Voltage Figure 9. A negative gatepad voltage will decrease the drain current. You agree that the Information as provided here through an intermediary may not be error-free, accurate or up-to-date and that it is not advice. The location of the RF bond pads is shown in Figure We will find the most reliable suppliers for you according to your description. It is fabricated using a PHEMT integrated circuit structure that provides exceptional efficiency and flat gain performance.
Number of Channels per Chip. The RF input and output have matching circuitry for use in W environments. Temperature Coefficient of Gain based on sample test 5. This MMIC has exposed air bridges on the top surface and should be handled by the edges or with a custom collet do not pick up die with vacuum on die center. During typical operation with a single 5- V supply, each gain stage is biased for Class- A operation for optimal power output with minimal distortion.
A negative gate-pad voltage zmmc decrease the drain current. Operation in excess of any one of these conditions may result in permanent damage to this device. Data obtained from on-wafer measurements 5 S11 dB